Parameters：
Applications
It is widely used for the preparation of nano-scale single- or multi-layer thin films, such as metallic film, semiconductor film, dielectric film and other novel thin-film materials.
Features
1. It can support two sputtering modes: DC sputtering and RF sputtering.
2. There are three vertical target sites and two inclined target sites. The position of the target relative to the substrate can be adjusted continuously by computer control in a small range, which is convenient for experimental operation.
3. The turntable, target position, coating time and shutter are controlled by computer.
Parameters
Vacuum chamber size: Pear type vacuum chamber, Ф 560×350 mm
Vacuum system configuration: Molecular pump, mechanical pump, gate valve
Pressure: ≤ 2.0×10-5 Pa (after baking and degassing)
Vacuum recovery time: 6×10-4 Pa in 40 minutes
Sample size: 30 mm, 6 pieces can be placed
Sample moving mode: 0-360 ° slewing
Heating: ≤ 600 ℃ ± 1 ℃
Negative substrate bias: -200V
Target assembly: 5 sets of permanent magnet targets
Target size: 60 mm
Distance between target and sample: 40-80 mm adjustable
Gas system: Flow controller 2 channels
Control system: Rotation, baffle switch, target position
